transistor
Latest
NC State patents multifunctional smart sensors, looks to 'revolutionize energy and communications infrastructure'
Bold words coming from a program that choked in epic fashion this past Saturday in front of 58,000+, don't you think? Thankfully for those who are actually involved in the global energy and communications infrastructure (not to mention depressed alumni), NC State's athletics department is far removed from its research labs, and the university's latest development was born and bred in the latter. A team of researchers have managed to patent a new technology that is expected to enable the development of "high-power, high-voltage and high-current devices that are critical for the development of energy distribution devices, such as smart grid technology and high-frequency military communications." The secret? Integrating gallium nitride (GaN) sensors and devices directly into silicon-based computer chips, a feat that hasn't been accomplished by any team prior. According to Dr. Jay Narayan, this newfangled integration has "enabled the creation of multifunctional smart sensors, high-electron mobility transistors, high-power devices, and high-voltage switches for smart grids," and it also makes a broader range of radio frequencies available -- something that'll obviously be beneficial in the advancement of communications. Best of all, a US-based corporation is already in the process of licensing the technology, so it's likely that we'll see this in use in the not-too-distant future. An ACC championship, however, remains far more elusive.
Darren Murph10.04.2010
Plastic Logic up for sale even though its QUE proReader isn't? (Updated: Investor confirms neither are for sale)
While you can't buy a QUE proReader until summer it seems that you can buy the company. Well, maybe not you but someone with a few hundred million in the bank. At least that's the way the Financial Times is framing a piece focused on UK investor Hermann Hauser, whose venture capital firm has a stake in Plastic Logic. According to Hauser, "We're in very interesting negotiations with ... well, that would be a separate interview, you will hopefully hear [more] about this in the autumn." Why would anybody want to buy this offshoot from the University of Cambridge's Cavendish Laboratory? After all, dedicated monochrome E-Ink devices are on their last legs, right? Chips made from plastic, not silicon, that's why -- intellectual property that could revolutionize integrated circuits and the entire computing industry. For the moment, however, Plastic Logic is only manufacturing the simple plastic transistors found inside its QUE proReader display that switch each pixel on or off -- a far cry from PCBs loaded with plastic integrated circuits. And as the FT acknowledges, any potential buyer might end up with an e-reader company and nothing more. Not exactly where you want to be at the dawn of the second coming of tablet computers. Updated: We heard from Plastic Logic investor Hermann Hauser who firmly says the company is not for sale. Apparently his comments were taken out of context. That still doesn't answer our question of when we will be able to get our hands on a QUE proReader. [Thanks, Charlie]
Thomas Ricker04.06.2010
IBM demonstrates 100GHz graphene transistor
It's just been a little over a week since IBM researchers announced that they managed to open up a bandgap for graphene-based field-effect transistors, but they're now already back to show off what that's made possible: a 100GHz graphene transistor. What's more, this latest record-setting transistor (which IBM hopes will one day replace silicon transistors) was made using processing technology that's compatible with that currently used in advanced silicon device fabrication, which should no doubt help speed up its eventual commercialization. Of course, any widespread adoption is still quite a ways away, but IBM says that this new transistor "demonstrates clearly that graphene can be utilized to produce high performance devices and integrated circuits." For those keeping score, this first-of-its-kind transistor already beats the frequency performance of current state-of-the-art silicon transistors of the same gate length, which now top out at a mere 40GHz.
Donald Melanson02.07.2010
IBM opens up graphene bandgap, edges closer to commercialization
Graphene transistors have long been touted as the next big thing to deliver a true leap in electronics of all sorts, but there's been a few considerable limitations holding them back from fully replacing silicon. IBM now says it's managed to overcome one of the biggest hurdles, however, and has announced that it's been able to open a "bandgap" for graphene field-effect transistors (or FETs). As EETimes reports, that's important because while graphene does have a higher carrier mobility than silicon, it doesn't have a natural bandgap, which has so far kept the on-off ratio of graphene transistors far lower than their silicon counterparts. Of course, IBM insists that its still only just scratched the surface, and says that it's already hard at work on opening up an even wider bandgap, achieving even higher electric fields, further improving the on-off current ratios of graphene FETs.
Donald Melanson01.28.2010
Inventors develop transistor to change color of any surface, your face notwithstanding
Color shifting has been a pipe dream for about as long as alchemists have claimed their studies to be legitimate, but now a brilliant team from the New University of Lisbon can finally say a breakthrough has been found. Essentially, these inventors have conjured up a transistor that changes the color of practically any surface (paper, glass, plastics, ceramics and metals, just to name a few). For what it's worth, this same team already has quite a bit of display cred, as it has developed technology currently used within Samsung panels. With the help of a few good men and woman at the University of Texas at Austin, the team was able to register for a patent right here in the US, and with any luck, they'll be giving OLEDs and e-paper a run for their money before we can snap our fingers twice and run around the block. Check a video (narrated in Portuguese) after the break.[Thanks, Nelson]
Darren Murph04.27.2009
New silicon film ferroelectric may pave the way for instant-on computers (or maybe not)
While the gang at Toshiba are still trying to bring FeRAM to the masses, a team of researchers at Cornell University have devised a new ferroelectric material composed of silicon and strontium titanate that they say can be used (someday!) to build "instant on" transistors. And you know what that means -- instant on computers for students, and instant on death rays for future robot armies. To coax the generally mild-mannered strontium titanate into acting "ferro-electrified" (not an actual scientific term), researchers grew it onto a silicon substrate using a process known as epitaxy. The material literally squeezed itself within the spaces of the silicon molecules, which gave it ferroelectric properties. As you may have guessed, this research was partially funded by the Office of Naval Research -- so the "death ray" remark may not be so off base, after all. We'll keep an eye out.[Via Daily Tech]
Joseph L. Flatley04.23.2009IBM claims title of world's fastest graphene transistor
As we've seen, plenty of researchers and companies are betting on graphene as being the big thing that will revolutionize transistors and, hence, all manner of electronics, and it looks like IBM is now claiming one of the biggest breakthroughs to date, not to mention the desirable title of "world's fastest graphene transistor." More specifically, IBM researchers have apparently been the first to demonstrate the operation of graphene field-effect transistors at gigahertz frequencies and, apparently even more importantly, they've also established the scaling behavior of the graphene transistors, which they say could eventually lead to the development of terahertz graphene transistors -- or, in other word's, keep Moore's Law around for quite a bit longer than many expected.
Donald Melanson12.19.2008
Researchers say new state of matter could extend Moore's Law
There's certainly been no shortage of folks trying to pin down an end date for Moore's Law, but there's also thankfully plenty of researchers doing their best to keep it going, and a team of physicists from McGill University in Montreal now say they've made a discovery that could keep the law alive even further into the future. Their big breakthrough is a new state of matter known as a quasi-three-dimensional electron crystal, which they discovered in a semiconductor material by using a device cooled at temperatures "roughly 100 times colder than intergalactic space," and then exposing the material to the "most powerful continuous magnetic fields generated on Earth." Unlike two-dimensional electron crystals, which lead researcher Dr. Guillaume Gervais equates to a ham sandwich, the quasi-three-dimensional electron crystals are in an "in-between state" between 2D and 3D, which could potentially allow for transistors to improve further as they run up against the physical limits imposed by the laws of physics. [Via InformationWeek, image courtesy University of Cambridge]
Donald Melanson10.22.2008
Another breakthrough purportedly brings us closer to quantum computing
In reality, quite a bit of time has passed since we've heard of the next great leap in the (seemingly) never-ending journey towards quantum computing, but we're incredibly relieved to learn that at least someone is still out there, somewhere, pressing on. An international team of researchers have reportedly shown that they can "control the quantum state of a single electron in a silicon transistor, even putting the electron in two places at once." Essentially, the team is using tiny semiconductor transistors to "control the state of a quantum system," but there is still a long ways to go before any of this is meaningful. The crew managed to discover a few things by chance, yet to create a quantum computer, they would need to "position atoms of arsenic (or some other material) in the transistors more reliably." For those of you way too geeked out, fret not -- we'll let you know when all of this technobabble finally amounts to something.[Thanks, Chris]
Darren Murph07.19.2008
Sixty years ago today: transistors -- and modern electronics -- were born
Like transistors? You must -- you're using a few million (or billion) right now just reading this sentence. But it's actually difficult to overstate the transistor's importance since its invention exactly 60 years ago today by super nerd gods John Bardeen, Walter Brattain, and William Shockley -- everything changed when solid state circuits were finally able to replace mechanical relays and vacuum tubes. There's little doubt electronics and technology as we know it today are only possible because of this fundamental discovery, although 60 years on we can only seem to navel gaze about what sorts of real jobs we'd all have if we weren't just spending our days obsessing about the gadgets these transistors power.
Ryan Block12.16.2007
Atomic "transistor" proposed using quantum cloud material
Intel might be oh-so-smug about its fancy new insulators and 45nm process, but doesn't have nothing on these upcoming atomic transistor dealios -- other than that whole "shipping" thing, of course. Scientists working at the Worcester Polytechnic Institute in Massachusetts and compadres at the University of Colorado Boulder have proposed implementing a "Bose-Einstein condensate" to pull this off -- a super-cold gas cloud of atoms all in the same quantum state -- which is manipulated with three adjacent chambers that are created by trapping atoms with magnets or laz0rs. By swapping atoms between the two side chambers, and controlling that action with the center chamber, a behavior is created similar to that of an electronic field-effect transistor. Which is apparently a good thing. So yeah, the tech definitely flies over our heads, but if this works it sounds like it's a pretty big breakthrough in building atomic "circuits" some day by connecting basic atom elements and should hopefully keep Moore's law alive and well a few decades down the road.[Thanks, Jeremy]
Paul Miller01.31.2007
Transistors nearing the one terahertz barrier
Tossing the all-too-common "world's fastest" label on your latest gig seems to happen entirely more frequently than necessary, but researchers at the University of Illinois at Urbana-Champaign are make this claim legitimately. While we've seen those wee transistors ratchet up in speed, these gurus have shattered any previous records that may have been standing by crafting a transistor "with a frequency of 845GHz," which is "approximately 300GHz faster" that those built by "other research groups." While the terahertz barrier is arguably the "Holy Grail" of transistor speed, this leap forward doesn't leave them too far off from the ultimate goal. In addition to the pseudomorphic construction, the crew also used tinier components in order to "reduce the distance electrons have to travel, resulting in an increase of speed." Notably, the chip "only" runs at 765GHz while ticking along at room temperature, but chilling it to minus 55-degrees Celsius bumps it up to the record-holding 845GHz mark. Developers are quite pleased with the results, but as expected, aren't entirely satisfied, and seemingly can't wait to push the envelope a bit further and break their own record sometime soon.
Darren Murph12.12.2006
Researchers set new transistor speed record
Ok, so there's no wind in your hair or chance of an immediate fiery death, but a world speed record's a world speed record, and when it could also lead to better and cheaper cellphones and digital cameras, we're all ears. At least that's what could be coming down the pipe thanks to the speedy new transistors created by researchers at the University of Southampton. What's even better is that they've done it with just a simple modification to existing transistor technology, meaning it should be fairly easy to move it from the research stage to the production line. The speed gain was achieved by adding fluorine implants to the silicon layers of the transistor, making the transistor thinner and more effective, ultimately topping out at a speed of 110 GHz, leaving the previous record of 70 GHz in the nanoscopic dust.[Via Slashdot]
Donald Melanson08.18.2006